RUR040N02
Transistors
10000
Ta = 25 ° C
6
Ta = 25 ° C
100
V DS = 10V
Pulsed
V DD =10V
V DD =10V
1000
t f
V GS =4.5V
R G =10 ?
Pulsed
4
I D =4.0V
R G =10 ?
Pulsed
10
Ta= ? 25 ° C
Ta=25 ° C
Ta=75 ° C
Ta=125 ° C
100
t d(off)
1
10
t d(on)
2
t r
0.1
1
0
0.01
0.1
1
10
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
9 10 11
DRAIN CURRENT : I D (A)
DRAIN CURRENT : I D (A)
Fig.10 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
Fig.11 Dynamic Input Characteristics
Fig.12 Forward Transfer
Admittance vs. Drain Current
Measurement circuits
Pulse Width
V GS
I D
R L
V DS
V GS
50%
10%
90%
50%
D.U.T.
V DS
10%
10%
R G
V DD
90%
90%
t d(on)
t on
t r
t d(off)
t off
t r
Fig.13 Switching Time Test Circuit
Fig.14 Switching Time Waveforms
V G
I G (Const.)
V GS
I D
R L
V DS
V GS
Q g
R G
D.U.T.
Q gs
Q gd
V DD
Charge
Fig.15 Gate Charge Test Circuit
Fig.16 Gate Charge Waveform
4/4
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